Variable coupling in n-type silicon–germanium double quantum dots

We report low-temperature electron transport behavior of trench-isolated silicon–germanium (SiGe) double quantum dots. By sweeping the potentials on side gates, we find a hexagonal charging diagram in the conductance measurements. It is also found that the gates allow the parameters of individual tunnel barriers to be changed over a wide range. Charging effects may therefore be observed in different coupling regimes, for example, the two dots that comprise the double dot can be induced to merge together yielding a large single dot.