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A systematic study of GaAs tunnel junctions for use in bipolar cascade laser diodes was performed. The current voltage characteristics of individual degenerately doped n+ and p+ regions grown by MBE were investigated and the most promising designs were placed within the individual laser substructures. This resulted in a 1 V reduction in operating voltage, as verified by comparing the lasing characteristics of several edge-emitting laser devices.
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Siskaninetz et al. (2002) studied this question.
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