Synthesis and ferroelectric properties of c-axis oriented Bi4Ti3O12 thin films by sol-gel process on platinum coated silicon

c-axis oriented Bi4Ti3O12films have been prepared on Pt/Ti/Si(111) substrates by sol-gel process. Crack-free films of 0.5 μm thickness were fabricated using a multilayer spinning technique and calcination at 600 °C for 30 min. The average grain size of the film is about 0.15 μm. The film exhibits ferroelectric hysteresis with remanent polarization Pr=4.8 μc/cm2 and coercive field Ec=70 kV/cm. The measured dielectric constant and loss factor at a frequency of 100 kHz are 170 and 0.02 respectively.