Chemical-Vapor Deposition Techniques of Al for Direct Growth on Oxidized Si and High-Speed Growth

This paper reports two novel Al-chemical vapor deposition (CVD) techniques for direct growth on SiO2 and high-speed growth. Blanket growth on SiO2 was achieved by using dimethylethylamine alane (DMEAA) as a precursor. Growth at 220° C following seeding at 300° C yields relatively smooth surfaces and resistivities of 3.3 µΩ· cm. Selective filling of via holes and nonselective blanket growth were continuously performed by changing precursors from dimethylaluminum hydride (DMAH) to DMEAA during growth. High-speed growth was achieved by adopting the liquid-transport method. A growth rate of 0.7 µ m/min was obtained for DMAH with growth selectivity being maintained.