Synthesis of BaTiO3 Thin Films Substituted with Hafnium and Zirconium by a Laser Ablation Method Using the Fourth-harmonic Wave of a YAG Laser

For the first time to our knowledge, BaTi(Hf0.5Zr0.5)O3 (BTHZ) thin films have been successfully synthesized using a laser ablation technique that employs the fourth harmonic wave of a pulsed YAG (FHG-YAG) laser. The BTHZ thin film with a preferred orientation in the c-axis was prepared under an oxygen gas pressure of 3 Pa at 800° C. Chemical bonds in the BTHZ compounds can easily be broken by irradiation at an optical energy of 7.47×10-19 J and an optical power density of 300 mJ/cm2. Crystallinity of the deposited films is dominated by the mean free path of each element.