High‐temperature (650° to 8507deg;C) electrical conductivity and Seebeck coefficient measurements as functions of oxygen partial pressure and temperature in polycrystalline lanthanum cuprate support a defect model consisting of oxygen interstitials charge compensated by electron holes. The La:Cu ratio was therefore estimated to be 2.000 ± 0.001. By comparison with existing oxygen nonstoichiometry data, the high‐temperature electron hole mobility and density‐of‐states were estimated.
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Su et al. (1990) studied this question.
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