We study the temperature dependence of vertical transport through the chiral sheath of surface states that exists near the sidewalls of GaAs∕Al0.01Ga0.09As multilayer structures in the regime of the integer quantum Hall effect. Because variable-range hopping through the bulk provides a parallel conduction channel, we design our experiment to extend the temperature range of sheath-dominated transport. To do so, we increase device perimeter by using fractal-perimeter mesas. We report on the nearly linear increase of the sheath conductivity with temperature, a result not predicted by existing theories for the edge state sheath.
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Walling et al. (2004) studied this question.
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