Mechanical Stress Influence on Electronic Transport in Low-k SiOC Dielectric Dual Damascene Capacitor

The electronic package with lead-free welding processes must be performed at higher temperature whereas the heat induces to mechanical stress. In this letter, we fabricate a low-k SiOC dielectric comb capacitor with dual damascene (DD) structures to study the mechanical stress influence on leakage current Ileakin DD by bending samples. Tensile stress causes increase of the Ileakbecause of the decrease of energy band barrier Φ of SiOC dielectric. In contrast, compress stress increases Φ of SiOC and decreases its Ileak. Finally, we conclude that the electron transport in DD is dominated by Schottky emission. We found that the variation of Ileakis attributed by the change of energy band barrier under mechanical stress.