Microwave performance of MCM-D embedded capacitors with interconnects

This paper discusses the microwave performance of 1.5–81-pF embedded capacitors constructed by placing a 175-nm-thick anodized layer between the 2-μm-thick ground and power planes in a silicon multichip-module-deposited (MCM-D) process. Analysis of an equivalent-circuit model shows that the intrinsic quality factor of these embedded capacitors is approximately 176 and that the overall quality factor is limited primarily by the resistance and inductance of the associated interconnect.