A suitable work function (4.29eV) ideal for n-type transistor is realized by preimplanting multiple n-type dopants in Ni fully silicided gate. Flexible adjustments of work function in Si band gap are realized by coimplanting B with n-type dopants. Leakage current and long-term reliability are not degraded by preimplantation of multiple dopants in Ni fully silicided gate.
No takes yet. Share an insight, caveat, or question.
Liu et al. (2006) studied this question.
Synapse has enriched 5 related papers. Consider them for comparative context: