A new preparation method of Cu/Cu2O Schottky barrier solarcells is proposed and worked out. It combines resistive evaporation of a thin semitransparent copper electrode on a Cu2O substrate (step I) and exposition of the obtained junction to the H+ ion irradiation (step II). Both, dark and illuminated (AMI) current-voltage characteristics of the cells are recorded at room temperature after each step of the junction formation process. Especially, the influence of H+ ion beam voltage, Ub, on the main solar cell parameters is analysed here. It is proved that low energy H+ ion irradiation (0 < Ub ⪅ 250 V) provides significant enhancement of the photovoltaic conversion efficiency of the Cu/Cu2O solar cells.
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Iwanowski et al. (1986) studied this question.
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