Deep-lying defect levels in a-SiH: C films are detected by means of a light-activated charge-storage experiment. The level energies and widths are determined for a series of films, a-Si_1-xH:Cₓ, in the compositional range $0<x<0.35$. The defect is identified as the negatively charged Si dangling bond.
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R. Könenkamp (1987) studied this question.
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