The growth of hexagonal boron nitride thin films on silicon using single source precursor

Poylcrystalline hexagonal boron nitride thin films were deposited on silicon substrates in the temperature range of 600–900°C from the organometallic single source precursor borane–triethylamine complex, (C2H5)3N·BH3. Hydrogen was used as carrier gas and additional nitrogen was supplied by molecular beam of ammonia, or nitrogen via a remote plasma. The films were characterized by Fourier transform infrared spectroscopy, Auger electron spectroscopy, transmission electron diffraction, optical transmission, and atomic force microscopy.