Plasma‐assisted CVD of cubic boron nitride

Single‐phase cubic boron nitride films of high quality might be of great importance as superhard wear‐resistant coatings and semiconductive materials. This paper reviews deposition techniques, precursors, deposition parameters and substrates employed in plasma‐assisted CHEMICAL VAPOR DEPOSITION (PACVD) of cubic boron nitride (c‐BN) as well as procedures applied for the characterization of c‐BN‐containing films. Mechanisms of the formation of sp3‐hybridized boron nitride during PACVD by use of either high‐energy nitrogen and argon ions or hydrogen plasmas are discussed. All experimental results on PACVD of c‐BN are thought to fit either “physical” or “chemical” routes for c‐BN low‐pressure synthesis, which are based on principles of c‐BN physical vapor deposition or diamond CVD.