Electron beam induced current experiments in the planar geometry are performed on Mo/CuInX2/CdS/ZnO thin film solar cells where X is S, Se. We measure the collection efficiency of cells as a function of the beam energy and subsequently identify the depth dependent collection function. For CuInS2 devices an effective diffusion length of 1.0±0.1 μm and a depletion layer of 0.05±0.03 μm is determined. The collection function of a CuInSe2 cell points towards a low recombination rate at the back contact and a diffusion length exceeding 3 μm.
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Scheer et al. (1995) studied this question.