Terahertz photoresponse of a GaAs/InGaAs transistor structure with large-area slit grating gate has been measured. Peaks in the photoresponse curve are assigned to plasmon resonances excited in the structure. More effective excitation of plasmon resonances is achieved in a grating gate structure with narrow slits, which increase the photoresponse amplitude by an order of magnitude.
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Maremyanin et al. (2010) studied this question.
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