The uniformity of the spatial distribution of (fast) interface traps N/sub it/ in small MOS devices was determined using charge pumping on MOSFETs with varying lengths and widths. The number of traps was found to be linearly proportional to both length and width as expected for a macroscopically uniform distribution. No evidence was found for an anomalous N/sub it/ distribution at the edges of the source/drain regions; however, the data suggest that there is a higher density of traps along the edges of LOCOS (local oxidation of silicon) field oxides.>
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Saks et al. (1990) studied this question.
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