At critical current density of the order of 100 kA/cm/sup 2/, tunnel Josephson junctions become overdamped and may be used in RSFQ circuits without external shunting, dramatically increasing circuit density. However, the physics of electron transport in such high-j/sub c/ junctions differs from the usual direct tunneling and until recently remained unclear. We have found that the observed dc I-V curves of niobium-trilayer junctions with j/sub c/=210 kA/cm/sup 2/ can be explained quantitatively by resonant tunneling through strongly disordered barriers. According to this interpretation, random spread of critical current in high-j/sub c/ junctions may be rather small (below 1% r.m.s.) even in deep-submicron junctions, making VLSI RSFQ circuits, with density above 10 MJJ/cm/sup 2/, feasible.
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Naveh et al. (2001) studied this question.
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