We propose and simulate dilute-nitride midwave-infrared (3–6μm) laser structures, whose type-II “W” active regions (InAsN∕GaAsSb∕InAsN∕GaInP) are designed for growth on InP substrates. Besides taking advantage of the relative maturity of InP-based processing technology, this approach allows the substrate to serve as the bottom optical cladding layer, and for a top InP clad to provide high thermal conductivity for epitaxial-side-down mounting. Band structure and optical analyses project that the proposed lasers should produce nearly as much gain as current type-II W devices on GaSb substrates.
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Vurgaftman et al. (2004) studied this question.
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