Deep level transient spectroscopy of defects introduced by resistive evaporation of metals on silicon

Schottky barrier diodes were formed on n- and p-type silicon by resistive evaporation of Ti and Au. The defects introduced in the substrate near the metal-silicon interface were characterized by deep level transient spectroscopy. For n-type devices defects were observed at 0.11, 0.14, and 0.17 eV below the conduction band, while for p-type devices one defect at 0.33 eV above the valence band was measured. All these defects could be removed by annealing the devices at 175 °C for 10 min.