AlGaAs/InGaAs heterostructure doped-channel FETs were used to fabricate a monolithic microwave front-end switch. The gate width of FETs were characterized to obtain an optimum condition to achieve better microwave performance. An insertion loss lower than 1 dB together with an isolation higher than 20 dB can be realized in this monolithic switch at a frequency below 3 GHz.
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Ke et al. (1996) studied this question.
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