The defect related luminescence in the near UV region between 3 and 4 eV has been investigated in insulating, n‐type and irradiation damaged AlN. A single luminescence band around 3.3 eV with a full width at half maximum of more than 500 meV, is attributed to a donor–acceptor pair transition at low temperatures. The substantial linewidth and a Stokes shift of around 1.3 eV result from strong electron–phonon coupling of the deep acceptor. While the chemical nature of the donor remains ambiguous, the acceptor species is attributed to the isolated Al vacancy, i.e. V_ Al^ 3- . This luminescence band might be interesting for studying n‐type compensation mechanisms in AlN.
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Schulz et al. (2011) studied this question.
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