⌘+K

Pulse Explore Communities Researchers Journals

Home Communities Explore

November 15, 1993Journal of Applied Physics

Exciton recombination in Te-rich ZnSexTe1−x epilayers

A. Naumov H. Stanzl K. Wolf S. Lankes W. Gebhardt

View at Publisher

Ask AI

Bookmark

Share

Abstract

ZnSexTe1−x epilayers were investigated by means of luminescence, reflectivity, and temperature dependence in the concentration range 0

Discussion

No takes yet. Share an insight, caveat, or question.

Cite This Study

Naumov et al. (1993) studied this question.

synapsesocial.com/papers/6a9fcea887f4160eae5cc2cd https://doi.org/10.1063/1.355186

View at Publisher

Ask AI

Bookmark

Share

Keep reading

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

1Localized Excitons in CdS 1− x Se x Solid SolutionsOriginal Research · 1982 · 153 citations
2Exciton self-trapping in ZnSe-ZnTe alloysOriginal Research · 1987 · 139 citations
3Molecular beam epitaxy of ZnSe1−<i>x</i>Te<i>x</i> ternary alloysOriginal Research · 1991 · 21 citations
4Evolution of the band gap and the dominant radiative recombination center versus the composition for ZnSe1−xTex alloys grown by molecular beam epitaxyOriginal Research · 1991 · 69 citations
5Investigation of strain in metalorganic vapor-phase epitaxy grown ZnTe layers by optical methodsOriginal Research · 1991 · 48 citations

Luminescence due to lattice-mismatch defects in ZnTe layers grown by metalorganic vapor phase epitaxy1993
Thermal Dissociation of Excitons Bounds to Neutral Acceptors in High-Purity GaAs1971
The temperature dependence (4.2 to 293 K) of the resonance energies of excitonic transitions in II–VI compounds1986
Direct optical thermometry in semiconductorsJournal of Applied Physics · 2026
Reconstruction of topological boundary modes in non-Hermitian photonic crystalsJournal of Applied Physics · 2026

More from Journal of Applied Physics

More from University of Regensburg