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Irradiation damage in an SiO 2 /Si system induced by photons and/or ions was evaluated. The flat-band voltage ( V fb ) was not shifted and the interface density of states ( D it ) was increased by irradiation of 172-nm-wavelength light, which corresponds to a photo-oxidation condition. Surface wave plasma (SWP) excited using microwave with Kr gas has an electron temperature less than 1 eV. However, V fb was shifted and D it was increased by the irradiation of photons from Kr plasma, which corresponds to a plasma-oxidation condition. V fb was not shifted and D it was increased by the irradiation of ions from Kr plasma. However, the SiO 2 /Si interface formed by photo-oxidation had a D it of 3 × 10 10 cm -2 eV -1 , which is equal to that of a SiO 2 /Si interface formed by a thermal-oxidation. This means that photo-oxidation forms the SiO 2 /Si interface by a concerted reaction of the photo-oxidation and the irradiation.
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Okamoto et al. (2004) studied this question.
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