We describe the layer structures, crystal-growth conditions, and characteristics of novel multilayers in the InGaAlAs/InGaAs/InAlAs materials system for the monolithic integration of heterojunction bipolar transistors (HBTs) and resonant-cavity photodiodes. The photodiodes are formed of the base and collector regions of the HBT layer. The use of a resonant cavity improves the quantum efficiency for an absorbing layer of given thickness. The HBTs had high current gains and well-behaved Gummel plots. The absorption and photocurrent characteristics of the resonant photodiodes show a ∼100% enhancement at resonance.
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Dodabalapur et al. (1993) studied this question.