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Extreme ultraviolet interference lithography (EUVIL) beamline which employed a single grating was constructed at the BL3 beamline in NewSUBARU synchrotron radiation facility. Bending magnet was attempted as a light source, and Ta layer was employed as an absorber layer of 0th order light in transparent grating. Using this system, 400-nm L&S resist pattern was replicated on a wafer, which shows possibility of EUV interference lithographic technology employing bending magnet as a light source.
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Suzuki et al. (2008) studied this question.
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