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We present a study of femtosecond hole-relaxation dynamics in n-modulation-doped GaAs/Alₓ{Ga}_{1{{-}}x}$As quantum wells at low temperatures and low photoexcitation density. We conclude that holes are nonthermal for approximately the first 800 fs and determine the hole-electron energy loss rates by comparing experimental results with Monte Carlo simulations. These results represent a definitive study of hole scattering and relaxation processes in a semiconductor.
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Tomita et al. (1993) studied this question.
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