Preparation of BaTiO3–BaZrO3Films by Metal-Organic Chemical Vapor Deposition

Barium titanate zirconate (Ba(Ti 1- x Zr x )O 3 ) films in the range of x =0 to 1.0 were prepared on (100)Pt/(100)MgO substrates at 973 K by metalorganic chemical vapor deposition (MOCVD). The effects of zirconium content ( x ) on the microstructure and dielectric properties of films were investigated. At x ≤0.15, the Ba(Ti 1- x Zr x )O 3 films showed highly crystallized and significant (001) orientation. The (001) orientation of the films decreased with increasing x , and the orientation became random at x >0.36. The dielectric constant of Ba(Ti 1- x Zr x )O 3 films changed with x from 35 to 689 and showed a maximum at x =0.15. The remanent polarization (2 P r ) and the coercive field (2 E C ) of Ba(Ti 0.85 Zr 0.15 )O 3 film were 3 µC·cm -2 and 14 kV·cm -1 , respectively. The onset electric field for nonohmic conduction of Ba(Ti 1- x Zr x )O 3 film increased from 10 k to 1 MV·cm -1 with increasing x .