Phosphorus Diffusion Using Spin‐On Phosphosilicate‐Glass Source and Halogen Lamps

Formation of phosphorus‐diffused layers using spin‐on phosphosilicate glass (SOPSG) source and rapid isothermal halogen lamp annealing (HLA) were investigated with respect to sheet resistivities, junction depths, carrier concentrations, and contact resistances. Higher HLA temperature and SOPSG phosphorus weight percent results in lower average resistivities (sheet resistivity × junction depth). With a 1205°C, 2s HLA using 37.5 w/o SOPSG, a shallow junction with low resistivity (37.7 Ω/□) was achieved. Carrier concentration profiles of phosphorus‐diffused layers formed by 1205°C HLA using 37.5 w/o SOPSG have very abrupt shapes and can be expressed by a function of , where is the depth and is the HLA soak time. They have almost the same maximum carrier concentration and the same contact resistance as the phosphorus‐doped layer formed by 31 P ion implantation and HLA.