Effects of Melting Temperature on the Broadband Infrared Luminescence of Bi‐Doped and Bi/Dy Co‐Doped Chalcohalide Glasses

Bismuth (Bi)‐doped and Bi/Dy co‐doped chalcohalide glasses are investigated as promising materials for amplifiers in optical communication. The samples synthesized at lower melting temperatures (MTs) are characterized by more intensified infrared emissions. With respect to the redox process of a liquid mixture at different MTs, we attribute an emission at 1230 nm to low‐valent Bi ions. The lower MT favors the formation of LVB ions, i.e. Bi + or Bi 2+ , while the higher MT promotes the production of higher‐valent Bi ions Bi 3+ . An enhanced broadband infrared luminescence with the full‐width at half‐maximum over 200 nm is achieved from the present Bi/Dy co‐doped chalcohalide glasses.