X-ray diffraction and Raman scattering study of SrBi2Ta2O9 ceramics and thin films with Bi3TiNbO9 addition

Good ferroelectric properties have previously been reported for both the (1−x)SrBi2Ti2O9–xBi3TiNbO9 bulk ceramics and thin films. In this work, x-ray diffraction and Raman scattering were used to investigate the effect of the incorporation of Bi3TiNbO9 into SrBi2Ta2O9 bulk ceramics and thin films. A better crystallization, larger grain size and larger displacement of the Ta–O(4) or Ta–O(5) ions are the origin for the good ferroelectric properties of (1−x)SrBi2Ta2O9–xBi3TiNbO9 with x=0.3–0.4.