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A mechanism is proposed for the Staebler-Wronski effect in a-Si:H. A bridge-bonded H interstitial defect is identified as the annealed state that can form a higher-energy metastable dangling-bond state in the light-soaked state. This defect can account for various features of light-induced degradation. The calculations are based on an a-Si:H model containing 10% hydrogen, bonded as the monohydride species. A Si-H two- and three-body interatomic potential has also been developed for the simulations.
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Biswas et al. (1991) studied this question.
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