Enhancement-Mode Buried-Channel In0.7 Ga0.3As/In0.52Al0.48As MOSFETs With High- κ Gate Dielectrics

The operation of long- and short-channel enhancement-modeIn0.7 Ga0.3As-channel MOSFETs with high-κgate dielectrics are demonstrated for the first time. The devices utilize an undoped buried-channel design. For a gate length of 5, the long-channel devices haveVₜ = + 0.25\ V, a subthreshold slope of 150 mV/dec, an equivalent oxide thickness of 4.4$+/-$0.3 nm, and a peak effective mobility of 1100cm²/V · s. For a gate length of 260 nm, the short-channel devices haveVₜ = + 0.5\ Vand a subthreshold slope of 200 mV/dec. Compared with Schottky-gated high-electron-mobility transistor devices, both long- and short-channel MOSFETs have two to four orders of magnitude lower gate leakage.