Temperature-Dependent Photoluminescence Studies of Ge1−ySny (y = 4.3%–9.0%) Grown on Ge-Buffered Si: Evidence for a Direct Bandgap Cross-Over Point

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The temperature (T)-dependent photoluminescence (PL) from Ge 1− y Sn y ( y = 4.3%–9.0%) alloys grown on Ge-buffered Si substrates was studied as a function of the Sn content. The PL from Ge 1− y Sn y alloys with high Sn contents (≥7.0%) exhibited the typical characteristics of direct bandgap semiconductors, such as an increase in the PL intensity with decreasing T and a single PL peak corresponding to a transition from the direct bandgap (Γ-valley) to the valence band at all temperatures from 10 to 300 K. For the Ge 1− y Sn y alloys with low Sn contents (≤6.2%), the PL emission peaks corresponding to both the direct bandgap ( E D ) and the indirect bandgap ( E ID ) PL appeared at most temperatures and as T was increased, the integrated PL intensities of E D initially increased, then decreased, and finally increased again. The unstrained E D and E ID energies estimated from the PL spectra at 75 and 125 K were plotted as functions of the Sn concentration, and the cross-over point for unstrained Ge 1− y Sn y was found to be about 6.4%–6.7% Sn by using linear fits to the data in the range of Sn contents from 0% to 9.0%. Based on the results at 75 and 125 K, the cross-over Sn concentration of unstrained Ge 1− y Sn y should be about 6.4%–6.7% Sn content at room temperature. The E D energies of the Ge 0.925 Sn 0.075 alloys were estimated from the T-dependent photoreflectance spectra, and the E D values was consistent with those obtained from PL spectra.