W‐band transmitter module using gallium arsenide mmics

This paper describes a high‐gain, single‐sideband, upconverting transmitter module developed for point‐to‐point telecommunications in the 83–87‐GHz band. Four gallium arsenide (GaAs) monolithic microwave integrated circuits (MMICs), which can readily be fabricated using standard commercial processes, are used in the multichip module. The transmitter exhibits a typical lower‐sideband up‐conversion gain of 20 dB and a typical output power of +5 dBm (at −1‐dB gain compression) between 83 and 87 GHz. Suppression of the higher sideband is greater than −15 dB. The two‐tone, 3rd‐order intercept point is typically +15 dBm for a tone spacing of 100 MHz at the lower sideband IF input.