We have simulated transient enhanced diffusion (TED) in the presence of end-of-range (EOR) defects produced by amorphizing implantation. We have taken into account Ostwald ripening of EOR defects, which reduces the efficiency of the defects as a source of self-interstitials. We derived a formula to describe this reduction of efficiency with time and used this formula for the simulation. The simulation satisfactorily predicts the TED at annealing conditions, where the influence of Ostwald ripening is significant.
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Masashi Uematsu (1999) studied this question.
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