Quantum chemical calculations on a model silicon lattice where combinations of interstitial p-type dopant species (aluminum-boron, aluminum-gallium, and boron-gallium) interact predict that all combinations will exhibit a pull effect. Diffusion of either member of a set will be retarded; the boron-gallium pair will exhibit the greatest attraction between p-type dopant pairs. There predictions are confirmed experimentally. Moreover, unanticipated enhanced electrical activity, greatly exceeding the additive, also is observed.
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S. Aronowitz (1987) studied this question.
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