The design and performance of the first wideband, low-DC power and high-IP/sub 3/ monolithic matrix amplifier using GaAs-AlGaAs heterojunction bipolar transistors (HBTs) is reported. The amplifier uses four 2*10 mu m/sup 2/ quad-emitter HBTs in a 2*2 matrix configuration and has a measured gain of 9.6+or-0.9 dB over the 2-19-GHz frequency band. Measured output IP/sub 3/ and 1-dB compression point are 26 dBm and 13 dBm, respectively, at 18 GHz. The total DC-power dissipation is less than 200 mW. The input and output return losses are better than -9.5 dB within the 2-16-GHz bandwidth.>
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Chang et al. (1992) studied this question.
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