Charge-Balanced Heteroepitaxial Growth of GaAs on Si

We propose charge-balanced heteroepitaxy, where the GaAs/Si interface is neutralized by inserting one monolayer of column II elements in place of the Ga atoms at the GaAs/Si interface. We have constructed this structure using Be atoms, and have investigated the initial stages of GaAs molecular beam epitaxial growth on this charge-balanced surface by high-energy electron diffraction, and ultraviolet and X-ray photoemission spectroscopy. These measurements reveal that the charge-balanced structure neutralizes the GaAs/Si interface, and the GaAs growth mode proceeds in a Stranski-Krastanow mode.