A photoreceiver circuit using an InGaAs p-i-n photodiode and InGaAs/InAlAs pseudomorphic modulation-doped field effect transistor (MODFET) based preamplifier has been fabricated. The 18 μm diam photodiode has a bandwidth of 29 GHz and the ft and fmax of the MODFET are 26 and 30 GHz, respectively. The photoreceiver circuits have bandwidths of 10 GHz and 17 dB gain. The sensitivity at 2.5 Gb/s is −26.4 dBm.
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Dutta et al. (1993) studied this question.
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