A theoretical investigation of low-field electron transport properties in thick layers of partially strain-relieved lattice-mismatched In/sub x/Ga/sub 1-x/As on GaAs semiconductor material is performed. The results indicate that room-temperature improvements in low-field mobility with increasing indium concentration are possible, but only occur if the density of misfit dislocations can be held below a critical value.>
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Kuhn et al. (1992) studied this question.
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