High-current, planar-doped pseudomorphic hemts Ga 0.4 In 0.6 As/Al 0.48 In 0.52 As HEMTs

The letter reports the first successful growth and fabrication of high-performance, planar-doped pseudomorphic GaInAs/AlInAs HEMTs. Hall mobilities as high as 11900cm2/Vs (300 K) with sheet-electron concentrations of 2.4 × 1012cm−2 were measured for the heterostructures. A drain-saturation current of 1 A/mm, a transconductance of 420mS/mm, and an extrapolated f1 of 64 GHz were achieved in a 0.5 μm gate-length HEMT.