The authors report a hybrid mirror GaAs quantum-well vertical-cavity surface-emitting laser with intracavity contacts, an n-side AlAs/GaAlAs and a p-side SiO2/Si3N4 distributed Bragg reflector. Selectively oxidised AlAs is used for current confinement under the top mirror. Record low threshold currents of 88 and 75 µA are measured at an emission wavelength of 850 nm for circular devices with 6 and 1.8 µm diameter, respectively.
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Langenfelder et al. (1998) studied this question.
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