Lateral p-i-n photodiodes made in laser-recrystallized silicon-on-insulator are investigated. Dark reverse currents of 0.1 pA/µm are obtained (5-V reverse voltage), as well as an efficiency of more than 5 percent in the green part of the visible spectrum. The influence of a back gate (the mechanical substrate) on the intrinsic zone of the diode is discussed. The carrier lifetime is found to be approximately 8 µs in the intrinsic zone, and the photogenerated current is proportional to incident light power over more than 5 decades.
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J.-P. Colinge (1986) studied this question.
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