A novel concept for electrically pumped GaSb-based vertical cavity surface emitting lasers including a structured buried tunnel junction as current aperture is presented. Continuous-wave room temperature operation at 2.325 µm has been achieved. Devices with an aperture diameter of 9 µm show threshold currents of 3.3 mA, threshold voltages of 0.87 V and an output power of 87 µW.
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Bachmann et al. (2008) studied this question.
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