High-efficiency 3.4–4.4 μm light-emitting diodes based on a p-AlGaAsSb/n-InGaAsSb/n-AlGaAsSb heterostructure operating at room temperature

Light-emitting diode structures operating at room temperature were obtained based on a p -AlGaAsSb/ n -InGaAsSb/ n -AlGaAsSb heterostructure with high Al content in the boundary layers formed on a p -GaSb(100) substrate. This structure ensures a threefold increase in the output radiant power and the external quantum yield (∼1%) as compared to the known InAsSb/InAsSbP heterostructure grown on an InAs substrate. A considerable increase in the pulsed output radiant power is explained by a more effective confinement of nonequilibrium charge carriers in the active region and by a decrease in the nonradiative recombination level, which is achieved by creating an isoperiodic structure.