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A method for measurement of the optical absorption coefficient of stacked heterostructures such as GaAlAs on GaAs substrates is described, based on the Fernelius model for an optically absorbing thin layer. This method enables us to obtain the thermal conductivity of the thin layer. The experimental results are compared with the results given by spectroscopic ellipsometry.
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Yacoubi et al. (1986) studied this question.
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