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January 15, 1984Journal of Applied Physics

Study of manganese accumulation in ion implanted GaAs influenced by Fermi energy and annealing technique

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HKH. KanberUniversity of KirkukMFM. FengUniversity of Illinois Urbana-ChampaignJWJ. M. WhelanCalifornia Polytechnic State University

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Kanber et al. (1984) studied this question.

synapsesocial.com/papers/6a9ff29417df3e2a23e61cb8https://doi.org/10.1063/1.333078
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  5. 5Cr profiles in semi-insulating GaAs after annealing with and without SiO2 encapsulants in a H2-As4 atmosphere1980 · 30 citations