We report on the development of an ohmic metal-semiconductor contact for application in an amplifying waveguide optical isolator. It is the result of magnetooptic waveguide simulations combined with experimental extraction of the contact resistivity. The optimized contact scheme is a p++-doped hybrid In0.81Ga0.19As0.41P0.59-In0.53Ga0.$ d47As structure, a compromise between good isolating performance and good electrical behavior
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Parys et al. (2007) studied this question.
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