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Mid-infrared GaAs based bound-to-continuum quantum cascade microlasers with ridge waveguide geometry are fabricated by the monolithic integration of deeply etched semiconductor-air Bragg mirrors. Devices with ultra-short cavities of 50 and 150 µm can be operated near room temperature (260 K) or at room temperature (300 K), respectively. 50 µm-long devices show singlemode emission up to relatively high drive currents due to the large mode spacing of about 30 cm−1 (340 nm).
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Höfling et al. (2005) studied this question.
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